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IXTA50N20P IXTP50N20P
IXTQ50N20P
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-3P (IXTQ) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 10 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
12
23
2720
490
105
26
35
70
30
70
17
37
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.42 ° C/W
R thCS
(TO-3P)
(TO-220)
0.21
0.25
° C/W
° C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
Q RM
V GS = 0V
Repetitive, pulse width limited by T JM
I F = 50A, V GS = 0V, Note 1
I F = 25A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
150
2.0
50
120
1.5
A
A
V
ns
μ C
TO-220 (IXTP) Outline
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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